BFQ149 Datasheet, PDF (4/6 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor

Philips Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFQ149
handbook, h⁴alfpage
Cc
(pF)
3
MEA328
2
1
0
0
10
VCB (V)
20
I_E = 0; f = 1 MHz; T_j = 25 °C.
Fig.2 Collector capacitance as a function of
collector-base voltage.
8
handbook, halfpage
fT
(GHz)
6
MBB347
4
2
0
0
50
I _C (mA)
100
V_CE = −10 V; f = 500 MHz; T_amb = 25 °C.
Fig.3 Transition frequency as a function of
collector current.
handbook,⁸h⁰alfpage
h _FE
60
MBB345
handbook,⁴h⁰alfpage
G _UM
(dB)
30
MEA329
40
20
20
10
0
0
100
I _C (mA)
200
V_CE = −10 V; T_j = 25 °C.
Fig.4 DC current gain as a function of collector
current.
0
10
10²
10³ _{f (MHz)} 10⁴
I_c = −50 mA; V_CE = −10 V; T_amb = 25 °C.
Fig.5 Maximum unilateral power gain as a
function of frequency.
September 1995
4