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BFQ149 Datasheet, PDF (2/6 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor | |||
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Philips Semiconductors
PNP 5 GHz wideband transistor
Product speciï¬cation
BFQ149
DESCRIPTION
PNP transistor in a SOT89 envelope.
It is intended for use in
UHF applications such as broadband
aerial amplifiers (30 to 860 MHz) and
in microwave amplifiers such as radar
systems, spectrum analyzers, etc.,
using SMD technology.
PINNING
PIN
DESCRIPTION
Code: FG
1 emitter
2 collector
3 base
fpage
1
2
3
Bottom view
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
Ptot
hFE
fT
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
GUM
maximum unilateral power gain
F
noise ï¬gure
CONDITIONS
MIN. TYP. MAX. UNIT
open base
â
â
â15 V
â
â
â100 mA
up to Ts = 135 °C (note 1)
â
IC = â70 mA; VCE = â10 V; Tj = 25 °C 20
IC = â75 mA; VCE = â10 V;
4
f = 500 MHz; Tj = 25 °C
IC = â50 mA; VCE = â10 V;
â
f = 500 MHz; Tamb = 25 °C
IC = â50 mA; VCE = â10 V;
â
Rs = 60 â¦; f = 500 MHz;
Tamb = 25 °C
â
1
50 â
5
â
12 â
3.75 â
W
GHz
dB
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
f > 1 MHz
up to Ts = 135 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
â
â
â
â
â
â
â65
â
MAX.
â20
â15
â3
â100
â150
1
150
150
UNIT
V
V
V
mA
mA
W
°C
°C
September 1995
2
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