BFQ136 Datasheet, PDF (4/9 Pages) NXP Semiconductors – NPN 4 GHz wideband transistor

Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFQ136
handbook, full pagewidth
V _BB
HF choke
4.7 µF
VCC
1.5 µF
input
75 Ω
14 nH
9 pF
6 nH
9 pF
3 pF
1 nF
9 pF
1 kΩ
9 pF
4.7 µF
DUT
14 nH ^{1.8 pF} 7.5 nH ^{20 pF}
3.3 pF
3 pF 36 nH
36 nH
output
75 Ω
MEA261
Fig.2 Intermodulation distortion MATV test circuit.
handboo¹k,²h⁰alfpage
h _FE
80
MBB361
12
handbook, halfpage
Cc
(pF)
8
MEA263
40
4
0
0
40
80
120
160
I _C (mA)
V_CE = 15 V; T_j = 25 °C.
Fig.3 DC current gain as a function of collector
current.
0
0
10
VCB (V)
20
I_E = i_e = 0; f = 1 MHz; T_j = 25 °C
Fig.4 Collector capacitance as a function of
collector-base voltage.
September 1995
4