BFQ136 Datasheet, PDF (2/9 Pages) NXP Semiconductors – NPN 4 GHz wideband transistor

Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFQ136
DESCRIPTION
NPN transistor in a four-lead
dual-emitter SOT122A envelope with
a ceramic cap. All leads are isolated
from the stud. Diffused
emitter-ballasting resistors and the
application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. It features
extremely high output voltage
capabilities.
It is primarily intended for final stages
in UHF amplifiers.
PINNING
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
page
4
1
3
Top view
2
MBK187
Fig.1 SOT122A.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CEO
I_C
P_tot
f_T
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
G_UM
maximum unilateral power gain
V_o
output voltage
CONDITIONS
open base
up to T_c = 100 °C
I_C = 500 mA; V_CE = 15 V; f = 500 MHz;
T_j = 25 °C
I_C = 500 mA; V_CE = 15 V; f = 800 MHz;
T_amb = 25 °C
I_c = 500 mA; V_CE = 15 V;
d_im = −60 dB; R_L = 75 Ω;
f_(p+q−r) = 793.25 MHz; T_amb = 25 °C
TYP.
−
−
−
4.0
12.5
2.5
MAX.
18
600
9
−
−
−
UNIT
V
mA
W
GHz
dB
V
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995
2