BFG21W_15 Datasheet, PDF (4/11 Pages) NXP Semiconductors – UHF power transistor

NXP Semiconductors
UHF power transistor
Product specification
BFG21W
CHARACTERISTICS
T_j = 25 C unless otherwise specified.
SYMBOL
PARAMETER
V_(BR)CBO
V_(BR)CEO
V_(BR)CER
V_(BR)EBO
I_CES
h_FE
C_c
C_re
f_T
collector-base breakdown voltage
collector-emitter breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
transition frequency
CONDITIONS
open emitter; I_C = 0.1 mA
open base; I_C = 10 mA
R_BE < 1 k, I_C = 10 mA
open collector; I_E = 0.1 mA
V_CE = 5 V; V_BE = 0
I_C = 200 mA; V_CE = 2 V
I_E = i_e= 0; V_CB = 3 V; f = 1 MHz
I_C = 0; V_CB = 3.6 V; f = 1 MHz
I_C = 200 mA; V_CE = 3.6 V;
f = 700 MHz
MIN.
15
4.5
10
1

40


18
MAX.




10
100
3
1.5

UNIT
V
V
V
V
A
pF
pF
GHz
APPLICATION INFORMATION
RF performance at T_s  60 C in a common emitter test circuit (see Figs 4 and 5).
MODE OF OPERATION
f
V_CE
(GHz)
(V)
I_CQ
(mA)
P_L
(dBm)
Pulsed; class-AB;  < 1 : 2; t_p = 5 ms
1.9
3.6
1
26
G_p
(dB)
10
_C
(%)
typ. 55
Ruggedness in class-AB operation
The transistor is capable of withstanding a load mismatch
corresponding to VSWR = 6 : 1 through all phases at
26 dBm output power under pulsed conditions:  = 1 : 2;
t_p = 5 ms; f = 1.9 GHz at V_CE = 4.5 V.
16
handbook, halfpage
Gp
(dB)
12
MGM220
80
η_C
Gp
(%)
60
8
40
η_C
4
20
0
0
5
10
15
20
25
30
PL (dBm)
Pulsed, class-AB operation;  < 1 : 2; t_p = 5 ms.
f = 1.9 GHz; V_CE = 3.6 V; I_CQ = 1 mA; tuned at P_L = 26 dBm.
Fig.3 Power gain and collector efficiency as a
function of the load power; typical values.
1998 Jul 06
4