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BFG21W_15 Datasheet, PDF (2/11 Pages) NXP Semiconductors – UHF power transistor | |||
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NXP Semiconductors
UHF power transistor
Product specification
BFG21W
FEATURES
ï· High power gain
ï· High efficiency
ï· 1.9 GHz operating area
ï· Linear and non-linear operation.
PINNING
PIN
1, 3
2
4
APPLICATIONS
ï· Common emitter class-AB output stage in hand held
radio equipment at 1.9 GHz such as DECT, PHS, etc.
handbook, halfpage
3
ï· Driver for DCS1800, 1900.
DESCRIPTION
emitter
base
collector
4
DESCRIPTION
NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applications
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package.
2
Top view
1
MSB842
Marking code: P1.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
RF performance at Ts ï£ 60 ï°C in a common emitter test circuit.
MODE OF OPERATION
f
VCE
(GHz)
(V)
Pulsed class-AB; ï¤ < 1 : 2; tp = 5 ms
1.9
3.6
PL
(dBm)
26
Gp
(dB)
ï³10
ï¨C
(%)
typ.55
1998 Jul 06
2
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