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| BCM847BS Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN matched double transistor; DhFE = 10 % | |||
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Philips Semiconductors
BCM847BS
NPN matched double transistor; âhFE = 10 %
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = 30 V; IE = 0 A
current
VCB = 30 V; IE = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE
VCEsat
VBEsat
VBE
Cc
DC current gain
VCE = 5 V; IC = 10 µA
VCE = 5 V; IC = 2 mA
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
base-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
base-emitter voltage VCE = 5 V; IC = 2 mA
VCE = 5 V; IC = 10 mA
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Ce
emitter capacitance VEB = 0.5 V; IC = ic = 0 A;
f = 1 MHz
fT
transition frequency VCE = 5 V; IC = 10 mA;
f = 100 MHz
Per device
âhFE
DC current gain
matching
VCE = 5 V; IC = 2 mA
âVBE
base-emitter voltage VCE = 5 V; IC = 2 mA
matching
[1] Pulse test: tp ⤠300 µs; δ ⤠0.02.
Min Typ
-
-
-
-
-
-
-
250
200 290
-
50
[1] -
200
-
760
-
910
610 660
-
-
-
-
-
11
100 250
-
-
-
-
Max Unit
15 nA
5
µA
100 nA
-
450
200 mV
400 mV
-
mV
-
mV
710 mV
770 mV
1.5 pF
-
pF
-
MHz
10 %
2
mV
9397 750 14722
Product data sheet
Rev. 02 â 6 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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