BCM847BS Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN matched double transistor; DhFE = 10 %

Philips Semiconductors
BCM847BS
NPN matched double transistor; ∆h_FE = 10 %
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage open base
-
V_EBO
emitter-base voltage
open collector
-
I_C
collector current (DC)
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
P_tot
total power dissipation
T_amb ≤ 25 °C
-
T_stg
storage temperature
−65
T_j
junction temperature
-
T_amb
ambient temperature
−65
Per device
P_tot
total power dissipation
T_amb ≤ 25 °C
[1] _-
Max Unit
50
V
45
V
6
V
100
mA
200
mA
200
mW
+150 °C
150
°C
+150 °C
300
mW
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6: Thermal characteristics
Symbol Parameter
Conditions
Per device
R_th(j-a)
thermal resistance from in free air
junction to ambient
Min
Typ
Max
[1] _-
-
416
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
9397 750 14722
Product data sheet
Rev. 02 — 6 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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