BC856S Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP general purpose double transistor

Philips Semiconductors
PNP general purpose double transistor
Product specification
BC856S
10⁴
handbook, halfpage
VCEsat
(mV)
10³
MCD763
10²
(1)
(3) (2)
10
10^−1
1
I_C/I_B = 20.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10
10²
10³
IC (mA)
Fig.2 Collector-emitter saturation voltage as a
function of collector current; typical values.
1200
handbook, halfpage
VBE
(mV)
1000
MCD764
800
(1)
(2)
600
400
(3)
20010_−2
10^−1
1
V_CE = 5 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
10
10²
10³
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
handbook⁵, ⁰fu⁰ll pagewidth
hFE
400
(1)
300
(2)
200
(3)
100
MCD765
0
10^−2
10^−1
1
V_CE = 5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10
10²
10³
IC (mA)
Fig.4 DC current gain as a function of collector current; typical values.
1999 Aug 24
4