BC856S Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP general purpose double transistor

Philips Semiconductors
PNP general purpose double transistor
Product specification
BC856S
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
CONDITIONS
note 1
VALUE
416
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per transistor
I_CBO
collector cut-off current
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
f_T
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation
voltage
collector capacitance
transition frequency
CONDITIONS
MIN.
I_E = 0; V_CB = −30 V
−
I_E = 0; V_CB = −30 V; T_j = 150 °C −
I_C = 0; V_EB = −5 V
−
I_C = −2 mA; V_CE = −5 V
110
I_C = −10 mA; I_B = −0.5 mA
−
I_C = −100 mA; I_B = −5 mA; note 1 −
I_C = −10 mA; I_B = −0.5 mA
−
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz −
I_C = −10 mA; V_CE = −5 V;
100
f = 100 MHz
TYP.
−
−
−
−
−
−
700
−
−
MAX.
−15
−5
−100
−
−100
−300
−
2.5
−
UNIT
nA
µA
nA
mV
mV
mV
pF
MHz
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
1999 Aug 24
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