BC856F Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP general purpose transistors

Philips Semiconductors
PNP general purpose transistors
Preliminary specification
BC856F; BC857F; BC858F series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
in free air; note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
h_FE
V_CEsat
emitter cut-off current
DC current gain
BC856AF; BC857AF; BC858AF
BC856BF; BC857BF; BC858BF
BC857CF; BC858CF
collector-emitter saturation voltage
V_BE
base-emitter voltage
C_c
collector capacitance
f_T
transition frequency
F
noise figure
CONDITIONS
I_E = 0; V_CB = −30 V
I_E = 0; V_CB = −30 V; T_j = 150 °C
I_C = 0; V_EB = −5 V
I_C = −2 mA; V_CE = −5 V
I_C = −10 mA; I_B = −0.5 mA
I_C = −100 mA; I_B = −5 mA; note 1
I_C = −2 mA; V_CE = −5 V
I_C = −10 mA; V_CE = −5 V
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
I_C = −10 mA; V_CE = −5 V; f = 100 MHz
I_C = −200 µA; V_CE = −5 V; R_S = 2 kΩ;
f = 1 kHz; B = 220 Hz
MIN.
−
−
−
125
220
420
−
−
−600
−
−
100
−
MAX.
−15
−5
−100
250
475
800
−200
−400
−750
−820
2.5
−
10
UNIT
nA
µA
nA
mV
mV
mV
mV
pF
MHz
dB
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
1999 May 21
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