BC856F Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP general purpose transistors

Philips Semiconductors
PNP general purpose transistors
Preliminary specification
BC856F; BC857F; BC858F series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
BC856AF; BC856BF
BC857AF; BC857BF; BC857CF
BC858AF; BC858BF; BC858CF
collector-emitter voltage
BC856AF; BC856BF
BC857AF; BC857BF; BC857CF
BC858AF; BC858BF; BC858CF
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
−80
V
−
−50
V
−
−30
V
−
−65
−
−45
−
−30
−
−5
V
−
−100 mA
−
−200 mA
−
−100 mA
−
250
mW
−65
+150 °C
−
150
°C
−65
+150 °C
1999 May 21
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