BC177 Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP general purpose transistor

Philips Semiconductors
PNP general purpose transistor
Product specification
BC177
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_EBO
h_FE
h_FE
V_CEsat
V_BEsat
V_BE
C_c
f_T
F
collector cut-off current
emitter cut-off current
I_E = 0; V_CB = −20 V
−
I_E = 0; V_CB = −20 V; T_j = 150 °C
−
I_C = 0; V_EB = −5 V
−
DC current gain
DC current gain
I_C = −2 mA; V_CE = −5 V
125
I_C = −2 mA; V_CE = −5 V
BC177A
125
BC177B
240
collector-emitter saturation voltage I_C = −10 mA; I_B = −0.5 mA
−
I_C = −100 mA; I_B = −5 mA
−
base-emitter saturation voltage
base-emitter voltage
I_C = −10 mA; I_B = −0.5 mA
I_C = −100 mA; I_B = −5 mA
I_C = −2 mA; V_CE = −5 V; note 1
−
−
−600
collector capacitance
transition frequency
noise figure
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
−
I_C = −10 mA; V_CE = −5 V; f = 100 MHz 100
I_C = −200 µA; V_CE = −5 V; R_S = 2 kΩ; −
f = 1 kHz; B = 200 Hz
−1
−
−
140
180
290
−75
−250
−700
−850
−650
4
−
−
−15
−10
50
500
260
500
−300
−
−
−
−750
6
−
10
nA
µA
nA
mV
mV
mV
mV
mV
pF
MHz
dB
Note
1. V_BE decreases by about −2 mV/K with increasing temperature.
1997 Jun 04
4