BC140 Datasheet, PDF(4/8 Page) NXP Semiconductors

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BC140 Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN medium power transistors

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Philips Semiconductors

NPN medium power transistors

Product speciï¬cation

BC140; BC141

CHARACTERISTICS

Tamb = 25 Â°C unless otherwise speciï¬ed.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

ICBO

collector cut-off current

IEBO

emitter cut-off current

hFE

DC current gain

BC140-10; BC141-10

IE = 0; VCB = 60 V

IE = 0; VCB = 60 V; Tj = 150 Â°C

IC = 0; VEB = 5 V

IC = 100 ÂµA; VCE = 1 V

10 100 nA

10 100 ÂµA

100 nA

40 â

BC140-16; BC141-16

90 â

hFE

DC current gain

BC140-10; BC141-10

IC = 100 mA; VCE = 1 V

63 100 160

BC140-16; BC141-16

100 160 250

hFE

DC current gain

BC140-10; BC141-10

IC = 1 A; VCE = 1 V

20 â

BC140-16; BC141-16

30 â

VCEsat

VBE

collector-emitter saturation voltage

base-emitter voltage

collector capacitance

emitter capacitance

transition frequency

IC = 1 A; IB = 100 mA

IC = 1 A; VCE = 1 V

IE = ie = 0; VCB = 10 V; f = 1 MHz

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

IC = 50 mA; VCE = 10 V; f = 100 MHz 50

0.6 1

1.2 1.8 V

25 pF

80 pF

MHz

Switching times (between 10% and 90% levels)

ton

turn-on time

toff

turn-off time

ICon = 100 mA; IBon = 5 mA;

IBoff = â5 mA

250 ns

850 ns

1997 May 12

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