BC140 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN medium power transistors

Philips Semiconductors
NPN medium power transistors
Product specification
BC140; BC141
FEATURES
• High current (max. 1 A)
• Low voltage (max. 60 V).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
PNP complements: BC160 and BC161.
handbook, halfpag1e
2
3
3
2
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
collector-base voltage
BC140
BC141
V_CEO
collector-emitter voltage
BC140
BC141
I_CM
peak collector current
P_tot
total power dissipation
h_FE
DC current gain
BC140-10; BC141-10
BC140-16; BC141-16
f_T
transition frequency
CONDITIONS
MIN.
open emitter
−
−
open base
−
−
−
T_case ≤ 45 °C
−
I_C = 100 mA; V_CE = 1 V
63
100
I_C = 50 mA; V_CE = 10 V; f = 100 MHz 50
TYP.
−
−
−
−
−
−
100
160
−
MAX. UNIT
80
V
100 V
40
V
60
V
1.5 A
3.7 W
160
250
−
MHz
1997 May 12
2