BAT160 Datasheet, PDF (4/8 Pages) NXP Semiconductors – Schottky barrier double diodes

Philips Semiconductors
Schottky barrier double diodes
GRAPHICAL DATA
10⁴
handbook, halfpage
IF
(mA)
10³
MCD784
10²
(2)
(1)
10
(3) (4)
1
0
0.2
0.4
0.6
0.8
VF (V)
(1) T_amb = 125 °C.
(2) T_amb = 100 °C.
(3) T_amb = 75 °C.
(4) T_amb = 25 °C.
Fig.5 Forward current as a function of forward
voltage; typical values.
Product specification
BAT160 series
10⁵
handbo_IRok, halfpage
(µA)
10⁴
(1)
10³
(2)
10²
(3)
MCD768
10
1
10^−1
0
(4)
20
40
60
VR (V)
(1) T_amb = 125 °C.
(2) T_amb = 100 °C.
(3) T_amb = 75 °C.
(4) T_amb = 25 °C.
Fig.6 Reverse current as a function of reverse
voltage; typical values.
10³
handbook, halfpage
Cd
(pF)
10²
MCD766
10
0
20
40
60
VR (V)
f = 1 MHz; T_amb = 25 °C.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
1999 Sep 20
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