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| BAT160 Datasheet, PDF (3/8 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
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Philips Semiconductors
Schottky barrier double diodes
Product speciï¬cation
BAT160 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR
continuous reverse voltage
IF
continuous forward current
IFSM
non-repetitive peak forward current
IRSM
Tstg
Tj
non-repetitive peak reverse current
storage temperature
junction temperature
tp = 8.3 ms; half sinewave;
JEDEC method
tp = 100 µs
MIN. MAX. UNIT
â
60
V
â
1
A
â
10
A
â
0.5
A
â65 +150 °C
â
150 °C
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
CONDITIONS
MAX.
UNIT
see Fig.5
IF = 100 mA
400
mV
IF = 1 A
650
mV
IF = 2 A
850
mV
VR = 60 V; note 1; see Fig.6
350
µA
VR = 60 V; Tj = 100 °C; note 1; 8
mA
see Fig.6
f = 1 MHz; VR = 4 V; see Fig 7 60
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SOT223 standard mounting conditions.
note 1
CONDITIONS
VALUE
100
UNIT
K/W
1999 Sep 20
3
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