BAT120_15 Datasheet, PDF (4/7 Pages) NXP Semiconductors – Schottky barrier double diodes

NXP Semiconductors
Schottky barrier double diodes
GRAPHICAL DATA
handbook₁,₀h4alfpage
IF
(mA)
10³
(1)
10²
(2)
(3)
(4)
10
MBL886
1
0
200
(1) T_amb = 125 °C.
(2) T_amb = 100 °C.
400
600
800
VF (mV)
(3) T_amb = 75 °C.
(4) T_amb = 25 °C.
Fig.3 Forward current as a function of forward
voltage; typical values.
Product data sheet
BAT120 series
10⁵
handboo_Ik_R, halfpage
(μA)
10⁴
10³
10²
MHB970
(1)
(2)
(3)
(4)
10
1
0
10
20 _{VR (V)} 30
(1) T_amb = 125 °C.
(2) T_amb = 100 °C.
(3) T_amb = 75 °C.
(4) T_amb = 25 °C.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
10³
handbook, halfpage
Cd
(pF)
10²
MBK571
10
0
10
20 _{VR (V)} 30
f = 1 MHz; T_amb = 25 °C.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 04
4