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| BAT120_15 Datasheet, PDF (3/7 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
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NXP Semiconductors
Schottky barrier double diodes
Product data sheet
BAT120 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR
continuous reverse voltage
IF
continuous forward current
IFSM
non-repetitive peak forward current
IRSM
Tstg
Tj
Tamb
non-repetitive peak reverse current
storage temperature
junction temperature
operating ambient temperature
tp < 10 ms; half sinewave;
JEDEC method
tp = 100 μs
MIN. MAX. UNIT
â
25
V
â
1
A
â
10
A
â
0.5
A
â65 +150 °C
â
125 °C
â65 +125 °C
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
CONDITIONS
TYP. MAX. UNIT
see Fig.3
IF = 100 mA
260 300 mV
IF = 1 A
400 450 mV
VR = 20 V; note 1; see Fig.4
80
500 μA
VR = 25 V; note 1; see Fig.4
â
1
mA
VR = 20 V; Tj = 100 °C; note 1 â
10
mA
f = 1 MHz; VR = 4 V; see Fig.5 100 â
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SOT223 standard mounting conditions.
CONDITIONS
note 1
VALUE
100
UNIT
K/W
2003 Aug 04
3
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