BAS70 Datasheet, PDF (4/8 Pages) NXP Semiconductors – Schottky barrier double diodes

Philips Semiconductors
Schottky barrier (double) diodes
GRAPHICAL DATA
10 ²
IF
(mA)
10
MRA803
1
10 ¹
(1) (2) (3) (4)
10 ²
0
0.2
0.4
0.6
0.8
1
VF (V)
(1) T_amb = 125 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
(4) T_amb = −40 °C.
Fig.3 Forward current as a function of forward
voltage; typical values.
10³
rdif
(Ω)
10²
MGL762
10
1
10^−1
1
10 _{IF (mA)} 10²
Product specification
BAS70 series
10 ²
IR
(µA)
10
MRA805
(1)
1
(2)
10 ¹
(3)
10 ²
10 ³
0
20
40
60
80
VR (V)
(1) T_amb = 150 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
2
Cd
(pF)
1.5
MRA804
1
0.5
0
0
20
40
60
80
VR (V)
f = 10 kHz.
Fig.5 Differential forward resistance as a function
of forward current; typical values.
f = 1 MHz.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1999 Jun 01
4