BAS70 Datasheet, PDF (3/8 Pages) NXP Semiconductors – Schottky barrier double diodes

Philips Semiconductors
Schottky barrier (double) diodes
Product specification
BAS70 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
V_R
I_F
I_FRM
I_FSM
T_stg
T_j
T_amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t_p ≤ 1 s; δ ≤ 0.5
t_p < 10 ms
MIN. MAX. UNIT
−
70
V
−
70
mA
−
70
mA
−
100
mA
−65
+150 °C
−
150
°C
−65
+150 °C
ELECTRICAL CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
V_F
forward voltage
I_R
reverse current
τ
charge carrier life time (Krakauer
method)
C_d
diode capacitance
Note
1. Pulse test: t_p = 300 µs; δ = 0.02.
CONDITIONS
see Fig.3
I_F = 1 mA
I_F = 10 mA
I_F = 15 mA
V_R = 50 V; note 1; see Fig.4
V_R = 70 V; note 1; see Fig.4
I_F = 5 mA
f = 1 MHz; V_R = 0; see Fig.6
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
CONDITIONS
MAX. UNIT
410
mV
750
mV
1
V
100
nA
10
µA
100
ps
2
pF
VALUE UNIT
500
K/W
1999 Jun 01
3