BAS40W Datasheet, PDF (4/8 Pages) NXP Semiconductors – Schottky barrier double diodes

Philips Semiconductors
Schottky barrier (double) diodes
GRAPHICAL DATA
handboo¹k,⁰h²alfpage
IF
(mA)
10
(1) (2) (3) (4)
1
10 ¹
MLC361 - 1
10 ²
0
0.2
0.4
0.6
0.8
1.0
VF (V)
(1) T_amb = 150 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
(4) T_amb = −40 °C.
Fig.6 Forward current as a function of forward
voltage; typical values.
Product specification
BAS40W series
10³
handbook, halfpage
IR
(µA)
10²
MLC362
(1)
10
(2)
1
10^−1
10^−2
0
(3)
10
20
30 _{VR (V)} 40
(1) T_amb = 150 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
handboo¹k,⁰h³alfpage
r _diff
(Ω)
10²
MLC364
10
1
10 ¹
1
10 _{IF (mA)} 10²
5
handboo_Ck, _dhalfpage
(pF)
4
MLC363
3
2
1
0
0
10
20
30
40
VR (V)
f = 10 KHz.
Fig.8 Differential forward resistance as a function
of forward current; typical values.
f = 1 MHz; T_amb = 25 °C.
Fig.9 Diode capacitance as a function of reverse
voltage; typical values.
1999 Apr 26
4