 English |
|
|
|
|
|
|
|
| BAS40W Datasheet, PDF (3/8 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
| |||
| ◁ |
Philips Semiconductors
Schottky barrier (double) diodes
Product speciï¬cation
BAS40W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR
IF
IFRM
IFSM
Tstg
Tj
Tamb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
tp ⤠1 s; δ ⤠0.5
tp < 10 ms
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
Per diode
VF
continuous forward voltage
IR
continuous reverse current
Ï
charge carrier life time
Cd
diode capacitance
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
CONDITIONS
see Fig.6
IF = 1 mA
IF = 10 mA
IF = 40 mA
VR = 30 V; note 1; see Fig.7
VR = 40 V; note 1; see Fig.7
IF = 5 mA; Krakauer method
VR = 0; f = 1 MHz; see Fig.9
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SOT323 standard mounting conditions.
note 1
CONDITIONS
MIN. MAX. UNIT
â
40
V
â
120 mA
â
120 mA
â
200 mA
â65 +150 °C
â
150 °C
â65 +150 °C
MAX.
UNIT
380
mV
500
mV
1
V
1
µA
10
µA
100
ps
5
pF
VALUE
625
UNIT
K/W
1999 Apr 26
3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese