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74HC1G126 Datasheet, PDF (4/16 Pages) NXP Semiconductors – Bus buffer/line driver; 3-state | |||
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Philips Semiconductors
Bus buffer/line driver; 3-state
Product speciï¬cation
74HC1G126; 74HCT1G126
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VCC
VI
VO
Tamb
tr, tf
PARAMETER
CONDITIONS
74HC1G
74HCT1G
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
supply voltage
input voltage
output voltage
operating ambient
temperature
2.0 5.0 6.0 4.5 5.0 5.5 V
0
â
VCC 0
â
VCC V
0
â
VCC 0
â
VCC V
see DC and AC â40 +25 +125 â40 +25 +125 °C
characteristics per
device
input rise and fall times
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
â
â
1000 â
â
â
ns
â
â
500 â
â
500 ns
â
â
400 â
â
â
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);
notes 1 and 2.
SYMBOL
VCC
IIK
IOK
IO
ICC
Tstg
PD
PARAMETER
supply voltage
input diode current
output diode current
output source or sink current
VCC or GND current
storage temperature
power dissipation per package
CONDITIONS
VI < â0.5 V or VI > VCC + 0.5 V
VO < â0.5 V or VO > VCC + 0.5 V
â0.5 V < VO < VCC + 0.5 V
for temperature range from â40 to +125 °C;
note 3
MIN.
â0.5
â
â
â
â
â65
â
MAX. UNIT
+7.0 V
±20 mA
±20 mA
±35.0 mA
±70 mA
+150 °C
200 mW
Notes
1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and
functional operation of the device at these or any other conditions beyond those under ârecommended operating
conditionsâ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
3. Above 55 °C the value of PD derates linearly with 2.5 mW/K.
2002 May 15
4
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