English
Language : 

SA5209 Datasheet, PDF (3/17 Pages) NXP Semiconductors – Wideband variable gain amplifier
Philips Semiconductors
Wideband variable gain amplifier
Product specification
SA5209
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VCC
Supply voltage
Power dissipation, TA = 25oC (still air)1
PD
16-Pin Plastic DIP
16-Pin Plastic SO
RATING
-0.5 to +8.0
1450
1100
TJMAX
TSTG
Maximum operating junction temperature
Storage temperature range
150
-65 to +150
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θJA:
16-Pin DIP: θJA = 85°C/W
16-Pin SO: θJA = 110°C/W
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
Supply voltage
TA
Operating ambient temperature range
SA Grade
TJ
Operating junction temperature range
SA Grade
RATING
VCC1 = VCC2 = 4.5 to 7.0V
-40 to +85
-40 to +105
UNITS
V
mW
mW
°C
°C
UNITS
V
°C
°C
DC ELECTRICAL CHARACTERISTICS
TA = 25oC, VCC1 = VCC2 = +5V, VAGC = 1.0V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
ICC
Supply current
DC tested
38
Over temperature1
30
AV
Voltage gain (single-ended in/single-ended out)
DC tested, RL = 10kΩ
Over temperature1
17
16
AV
Voltage gain (single-ended in/differential out)
DC tested, RL = 10kΩ
Over temperature1
23
22
RIN
Input resistance (single-ended)
DC tested at ±50µA
0.9
Over temperature1
0.8
ROUT
Output resistance (single-ended)
DC tested at ±1mA
40
Over temperature1
35
VOS
VIN
VOUT
PSRR
VBG
Output offset voltage (output referred)
DC level on inputs
DC level on outputs
Output offset supply rejection ratio
(output referred)
Bandgap reference voltage
Over temperature1
1.6
Over temperature1
1.4
1.9
Over temperature1
1.7
20
Over temperature1
15
4.5V<VCC<7V
RBG = 10kΩ
1.2
Over temperature1
1.1
LIMITS
TYP
43
19
25
1.2
60
+20
2.0
2.4
45
1.32
MAX
48
55
21
22
27
28
1.5
1.7
75
90
±100
±250
2.4
2.6
2.9
3.1
1.45
1.55
UNIT
mA
dB
dB
kΩ
Ω
mV
V
V
dB
V
1997 Nov 07
3