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PZTM1102 Datasheet, PDF (3/7 Pages) NXP Semiconductors – PNP transistor/Schottky-diode module
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Philips Semiconductors
PNP transistor/Schottky-diode module
Product specification
PZTM1102
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
NPN transistor
V(BR)CBO
V(BR)CES
V(BR)EBO
ICES
IEBO
VCEsat
VCEsat
VBEsat
VBEsat
Cob
Cib
fT
hFE
hFE
collector-base breakdown open emitter; IC = −10 µA; IE = 0;
−40
voltage
Tamb = −55 to +150 °C; note 1
collector-emitter
open base; IC = −1 mA; VBE = 0;
−40
breakdown voltage
Tamb = −55 to +150 °C; note 1
emitter-base breakdown open collector; IE = −10 µA; IC = 0;
−6
voltage
Tamb = −55 to +150 °C; note 1
collector-emitter cut-off
current
VCE = −20 V; VBE = 0
−
VCE = −20 V; VBE = 0; Tamb = −55 to +150 °C −
emitter-base cut-off current VEB = −6 V; IC = 0
−
VEB = −6 V; IC = 0; Tamb = −55 to +150 °C −
collector-emitter saturation note 1
voltage
IC = −10 mA; IB = −1 mA
−
IC = −50 mA; IB = −3.2 mA
−
collector-emitter saturation Tamb = −55 to +150 °C; note 1
voltage
IC = −10 mA; IB = −1 mA
−
IC = −50 mA; IB = −3.2 mA
−
base-emitter saturation
note 1
voltage
IC = −10 mA; IB = −1 mA
−
IC = −50 mA; IB = −5 mA
−
base-emitter saturation
Tamb = −55 to +150 °C; note 1
voltage
IC = −10 mA; IB = −1 mA
−
IC = −50 mA; IB = −5 mA
−
output capacitance
IE = ie = 0; VCB = −5 V; f = 1 MHz
−
input capacitance
IC = ic = 0; VEB = −0.5 V; f = 1 MHz
−
transition frequency
IC = −10 mA; VCE = −20 V; f = 100 MHz
250
DC current gain
VCE = −1 V; note 1
IC = −0.1 mA
40
IC = −1 mA
70
IC = −10 mA
100
IC = −100 mA
30
DC current gain
VCE = −1 V; Tamb = −55 to +150 °C; note 1
IC = −10 mA
60
IC = −100 mA
15
SWITCHING TIMES (see Figs 2 and 3)
td
delay time
VCC = 5 V
3
tr
rise time
IC = 50 mA
13
ts
storage time
Vi = 0 to 5 V
200
tf
fall time
50
MAX. UNIT
−
V
−
V
−
V
100
nA
50
µA
50
nA
10
µA
−200 mV
−300 mV
−250 mV
−350 mV
−850 mV
−950 mV
−1.0
V
−1.1
V
4.5
pF
10
pF
−
MHz
−
−
300
−
500
−
7
ns
23
ns
380
ns
80
ns
1996 May 09
3
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