PZTM1102 Datasheet, PDF (2/7 Pages) NXP Semiconductors – PNP transistor/Schottky-diode module

Philips Semiconductors
PNP transistor/Schottky-diode module
Product specification
PZTM1102
FEATURES
• Low output capacitance
• Fast switching time
• Integrated Schottky protection
diode.
APPLICATIONS
• High-speed switching for industrial
applications.
PINNING
PIN
DESCRIPTION
1 cathode Schottky
2 base
3 emitter
4 collector, anode Schottky
DESCRIPTION
Combination of a PNP transistor and a Schottky barrier diode in a plastic
SOT223 package. NPN complement: PZTM1101.
handbook, halfpage
4
1
1
2
3
Top view
4
2
3
MAM237
Marking code: TM1102.
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
PNP transistor
V_CBO
V_CES
V_EBO
I_C
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
Schottky barrier diode
V_R
I_F
I_F(AV)
P
continuous reverse voltage
forward current (DC)
average forward current
power dissipation
T_j
junction temperature
Combined device
P_tot
T_amb
T_stg
T_j
total power dissipation
operating ambient temperature
storage temperature
junction temperature
open emitter
V_BE = 0
open collector
up to T_amb = 25 °C; note 1
reverse current applied
forward current applied
up to T_amb = 25 °C; note 2
−
−40
V
−
−40
V
−
−6
V
−
−200 mA
−
40
V
−
1
A
−
1
A
−
0.5
W
−
125
°C
−
150
°C
−
1.2
W
−55
+150 °C
−55
+150 °C
−
150
°C
Notes
1. An additional copper area of >20 mm² is required for pin 1, if power dissipation in the Schottky die is >0.5 W.
2. It is not allowed to dissipate the total power of 1.2 W in the Schottky die only.
1996 May 09
2