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PZT3906 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP switching transistor | |||
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Philips Semiconductors
PNP switching transistor
Product speciï¬cation
PZT3906
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
115
K/W
34
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see âThermal considerations for SOT223 in the General Part of associated
Handbookâ.
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
F
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise ï¬gure
IE = 0; VCB = â30 V
â
IC = 0; VEB = â6 V
â
VCE = â1 V; (see Fig.2)
IC = â0.1 mA
60
IC = â1 mA
80
IC = â10 mA
100
IC = â50 mA
60
IC = â100 mA
30
IC = â10 mA; IB = â1 mA
â
IC = â50 mA; IB = â5 mA
â
IC = â10 mA; IB = â1 mA
â650
IC = â50 mA; IB = â5 mA
â
IE = ie = 0; VCB = â5 V; f = 1 MHz
â
IC = ic = 0; VEB = â500 mV; f = 1 MHz â
IC = â10 mA; VCE = â20 V; f = 100 MHz 250
IC = â100 µA; VCE = â5 V; RS = 1 kâ¦; â
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.3)
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = â10 mA; IBon = â1 mA;
â
IBoff = 1 mA
â
â
â
â
â
MAX.
â50
â50
â
â
300
â
â
â200
â200
â850
â950
4.5
10
â
4
65
35
35
300
225
75
UNIT
nA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
ns
ns
ns
ns
ns
ns
1999 Apr 14
3
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