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PZT3906 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP switching transistor | |||
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Philips Semiconductors
PNP switching transistor
Product speciï¬cation
PZT3906
FEATURES
⢠Low current (max. 100 mA)
⢠Low voltage (max. 40 V).
APPLICATIONS
⢠High-speed switching.
DESCRIPTION
PNP switching transistor in a SOT223 plastic package.
NPN complement: PZT3904.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
4
2, 4
1
3
1
2
3
Top view
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ⤠25 °C; note 1
MIN.
â
â
â
â
â
â
â
â65
â
â65
MAX.
â40
â40
â6
â100
â200
â100
1.05
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see âThermal considerations for SOT223 in the General Part of associated
Handbookâ.
1999 Apr 14
2
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