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| PSS9014C Datasheet, PDF (3/7 Pages) NXP Semiconductors – NPN general purpose transistor | |||
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Philips Semiconductors
NPN general purpose transistor
Product speciï¬cation
PSS9014C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
VALUE
250
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
ICEO
collector-emitter cut-off current
IEBO
emitter-base cut-off current
hFE
DC current gain
VCEsat
VBEsat
VBEon
fT
Cc
F
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
noise ï¬gure
CONDITIONS
MIN.
VCB = 30 V; IE = 0
â
VCB = 30 V; IE = 0; Tamb = 150 °C â
VCE = 30 V; IB = 0
â
VEB = 5 V; IC = 0
â
IC = 1 mA; VCE = 5 V
200
IC = 2 mA; VCE = 5 V
200
IC = 100 mA; IB = 5 mA; note 1 â
IC = 100 mA; IB = 0.5 mA; note 1 â
IC = 2 mA; VCE = 5 V
580
IC = 50 mA; VCE = 10 V;
100
f = 100 MHz
VCB = 10 V; IE = ie = 0; f = 1 MHz â
VCE = 5 V; IC = 0.2 mA;
â
RS = 2 kâ¦; f = 1 kHz; B = 200 Hz
TYP.
â
â
â
â
300
300
200
815
650
220
1.6
â
MAX. UNIT
15
nA
5
µA
100 nA
100 nA
600
450
300 mV
850 mV
700 mV
â
MHz
1.75 pF
10
dB
Note
1. Pulse test: tp ⤠300 µs; δ ⤠0.02.
2004 Aug 10
3
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