PSS9014C Datasheet, PDF (2/7 Pages) NXP Semiconductors – NPN general purpose transistor

Philips Semiconductors
NPN general purpose transistor
Product specification
PSS9014C
FEATURES
• High power dissipation: 500 mW
• Low collector capacitance
• Low collector-emitter saturation voltage
• High current capability.
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN low V_CEsat transistor in a SOT54 (TO-92) plastic
package.
MARKING
TYPE NUMBER
PSS9014C
MARKING CODE
S9014C
handbook, halfpage1
2
3
1
2
3
MAM279
Fig.1 Simplified outline (SOT54) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
50
45
5
100
200
200
500
+150
150
+150
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
2004 Aug 10
2