PSS9013G Datasheet, PDF (3/9 Pages) NXP Semiconductors – 20 V NPN general purpose transistors

Philips Semiconductors
20 V NPN general purpose transistors
Product specification
PSS9013 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
R_{th j-a}
thermal resistance from junction to ambient in free air; note 1
175
Note
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint.
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector-base cut-off current
I_EBO
h_FE
h_FE
V_CEsat
V_BEsat
V_BEon
C_c
emitter-base cut-off current
DC current gain
DC current gain
PSS9013G
PSS9013H
collector-emitter saturation
voltage
base-emitter saturation
voltage
base-emitter turn on voltage
collector capacitance
CONDITIONS
V_CB = 35 V; I_E = 0
V_CB = 35 V; I_E = 0; T_j = 150 °C
V_EB = 5 V; I_C = 0
V_CE = 1 V; I_C = 500 mA
V_CE = 1 V; I_C = 50 mA
I_C = 100 mA; I_B = 10 mA
I_C = 500 mA; I_B = 50 mA
I_C = 500 mA; I_B = 50 mA
MIN.
−
−
−
40
112
144
−
−
−
V_CE = 1 V; I_C = 100mA
−
V_CB = 6 V; I_E = I_e = 0; f = 1 MHz −
TYP.
−
−
−
−
−
−
60
250
1
760
5
MAX.
100
50
100
−
UNIT
nA
µA
nA
166
202
250
mV
600
mV
1.2
V
1000 mV
−
pF
2004 Aug 10
3