PSS9013G Datasheet, PDF (2/9 Pages) NXP Semiconductors – 20 V NPN general purpose transistors

Philips Semiconductors
20 V NPN general purpose transistors
Product specification
PSS9013 series
FEATURES
• High power dissipation: 710 mW
• Low collector capacitance
• Low collector-emitter saturation voltage
• High current capability.
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN general purpose transistor in a SOT54 (TO-92)
leaded plastic package. PNP complement:
PSS9012 series.
MARKING
TYPE NUMBER
PSS9013G
PSS9013H
MARKING CODE
S9013G
S9013H
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CEO
I_C
I_CM
collector-emitter voltage
collector current (DC)
peak collector current
MAX. UNIT
20
V
500 mA
1
A
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
handbook, halfpage1
2
3
1
2
3
MAM279
Fig.1 Simplified outline (SOT54; TO-92) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
40
20
5
500
1
100
710
+150
150
+150
Note
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint.
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
2004 Aug 10
2