PSMN4R6-60BS_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN4R6-60BS
N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_DGR
V_GS
I_D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
I_DM
peak drain current
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
T_mb = 100 °C; see Figure 1
T_mb = 25 °C; see Figure 1
pulsed; t_p = 10 µs; T_mb = 25 °C;
see Figure 3
Min Max Unit
-
60 V
-
60 V
-20 20 V
[1]
-
99.7 A
[1]
-
100 A
-
565 A
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
T_sld(M)
peak soldering temperature
Source-drain diode
T_mb = 25 °C; see Figure 2
-
211 W
-55 175 °C
-55 175 °C
-
260 °C
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
pulsed; t_p = 10 µs; T_mb = 25 °C
[1]
-
-
100 A
565 A
E_DS(AL)S
non-repetitive drain-source
avalanche energy
V_GS = 10 V; T_j(init) = 25 °C; I_D = 100 A;
V_sup ≤ 60 V; R_GS = 50 Ω; unclamped
-
266 mJ
[1] Continuous current is limited by package.
150
I_D
(A)
(1)
100
003aad760
120
P_der
(%)
80
03aa16
50
40
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN4R6-60BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
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