PSMN1R5-40PS Datasheet, PDF (3/8 Pages) NXP Semiconductors – NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

Benefits of Superjunction technology
Many suppliers focus on two favourable indicators when defining MOSFET performance, but this only tells part of the story.
The spider chart below shows the relative performance of NextPower versus the leading MOSFET vendors, comparing
the six most important MOSFET parameters required for high-performance & high reliability switching applications. The
outside edge of the graph represents the ‘best-in-class’ performance, whilst scoring towards the centre of the graph
represents a weakness.
} L ow R_DS(on) gives low I²R losses and superior performance
when used in a SYNC FET or power OR-ing application
} L ow Q_oss gives reduced losses between the drain
& source terminals since the energy stored in
the output capacitance (C_oss) is wasted whenever
the voltage changes across the output terminals
} SOA performance provides tolerance to overload & fault
conditions. The graph shows the maximum allowable
current for a 1 mS pulse at V_DS=10 V
} Low Miller charge (Q_GD) gives reduced switching losses
between the MOSFET’s drain & source terminals when
the MOSFET turns ON or turns OFF
} Low gate charge (Q_G) gives reduced losses in the gate
drive circuit since less energy is required to turn the
MOSFET ON & OFF
} Superior junction temperature rating, T_j(max), is proof that
LFPAK is the most rugged Power-SO8 package available.
LFPAK is the best choice for demanding environments
and where high reliability is required
Comparison of NextPower technology with key competitor types
RDS(on)max
@ Vgs = 4.5 V
Q FOM
oss
SOA rating
T
j(max)
Combined Q &
G
Q FOM
GD
NXP
Competitor A
Competitor B
NextPower MOSFETs - Visit us at www.nxp.com/mosfets
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