PSMN1R5-40PS Datasheet, PDF (2/8 Pages) NXP Semiconductors – NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

NextPower 25 V & 30 V MOSFETs
in LFPAK (Power-SO8)
NXP introduces a range of high performance
N-channel, logic-level MOSFETs in LFPAK
As a power design engineer, compromise is never far from your mind. Do I choose a low R_DS(on) device and accept the
higher output capacitance? Do I demand the lowest gate charge characteristics to reduce switching losses but then find
that the package options are no longer ideal in my application?
The NextPower range of MOSFETs from NXP provides uniquely balanced characteristics across the six most important
parameters essential for your latest high efficiency and high reliability designs. More performance, less compromise…
Many competitors focus only on optimising R_DS(on) and Q_g. As Q_g gets lower then losses due to Q_oss and Q_gd become
more significant. NextPower uses Superjunction technology to provide the optimum balance between low R_DS(on), low
Q_oss, low Q_g(tot) and Q_gd to give optimum switching performance. NextPower delivers superior SOA performance, and
low Q_oss reduces the losses between the output DRAIN & SOURCE terminals. NextPower also delivers the lowest R_DS(on)
with sub 1 mΩ types at both 25 V and 30 V.
LFPAK packaging provides rugged power switching on a compact 5 mm x 6 mm footprint compatible with other
Power-SO8 vendors. The unique benefits of LFPAK make it the best package choice for demanding applications or where
high-reliability is required. It also allows for visual inspection, reducing the need for costly X-ray equipment to detect
solder defects as is common with QFN style Power-SO8 packages.
Key benefits
} High efficiency in power switching applications
} Industry’s lowest R_DS(on) Power-SO8 - Less than 1 mΩ
at 25 V and 30 V
} Low Q_oss for reduced output losses between DRAIN &
SOURCE
} Low Q_gd for reduced switching losses and high frequency
switching
} 20 V rated GATE provides better tolerance to voltage
transients than lateral MOSFET types
} Superior ‘Safe Operating Area’ performance compared
to other Trench MOSFET vendors
} Optimised for 4.5 V gate drive voltage
} Optimum switching performance under light & heavy
load conditions
} LFPAK package for compatibility with other vendor
Power-SO8 types
} Eliminates costly X-ray inspection – LFPAK solder joints
can be optically inspected
Key applications
} Synchronous buck regulators
} DC-DC conversion
} Voltage regulator modules (VRM)
} Power OR-ing
2 NextPower MOSFETs - Visit us at www.nxp.com/mosfets