PSMN040-200W Datasheet, PDF (3/7 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PSMN040-200W
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175
Mounting Base temperature, Tmb (C)
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); V_GS ≥ 10 V
1000 ^{Peak Pulsed Drain Current, IDM (A)}
RDS(on) = VDS/ ID
100
tp = 10 us
100 us
1 ms
10
D.C.
10 ms
100 ms
1
1
10
100
1000
Drain-Source Voltage, VDS (V)
Fig.3. Safe operating area
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
1 ^{Transient thermal impedance, Zth j-mb (K/W)}
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PD _tp D = tp/T
single pulse
0.001
1E-06 1E-05 1E-04 1E-03 1E-02
Pulse width, tp (s)
T
1E-01
1E+00
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
60 ^{Drain Current, ID (A)}
55 ^{Tj = 25 C}
VGS = 10V
6V
50
8V
45
40
35
30
5V
25
20
4.8 V
15
4.6 V
10
4.4 V
5
4.2 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS)
Drain-Source On Resistance, RDS(on) (Ohms)
0.2
4.2 V 4.4 V 4.6 V
0.18
Tj = 25 C
0.16
0.14
0.12
4.8 V
0.1
0.08
5V
0.06
0.04
0.02
0
0
6V
VGS = 10V
5
10 15 20 25 30 35 40
Drain Current, ID (A)
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D)
August 1999
3
Rev 1.000