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| PSMN003-25W Datasheet, PDF (3/8 Pages) NXP Semiconductors – PSMN003-25W | |||
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Philips Semiconductors
Product specification
N-channel logic level TrenchMOS⢠transistor
PSMN003-25W
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
(body diode)
ISM
Pulsed source current (body
diode)
VSD
Diode forward voltage
IF = 25 A; VGS = 0 V
IF = 75 A; VGS = 0 V
trr
Reverse recovery time
IF = 20 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge VGS = 0 V; VR = 20 V
MIN. TYP. MAX. UNIT
-
- 100 A
-
- 300 A
- 0.85 1.2 V
- 1.0 -
- 250 - ns
- 1.5 - µC
October 1999
3
Rev 1.100
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