PMMT491A Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN BISS transistor

Philips Semiconductors
NPN BISS transistor
Product specification
PMMT491A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
V_BEsat
V_BE
C_c
f_T
PARAMETER
CONDITIONS
MIN.
collector cut-off current
I_E = 0; V_CB = 30 V
−
collector cut-off current
I_B = 0; V_CE = 30 V
−
emitter cut-off current
I_C = 0; V_EB = 5 V
−
DC current gain
V_CE = 5 V; note 1
I_C = 1 mA
300
I_C = 500 mA
300
I_C = 1 A
200
collector-emitter saturation voltage note 1
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
I_C = 100 mA; I_B = 1 mA
−
I_C = 500 mA; I_B = 50 mA
−
I_C = 1 A; I_B = 100 mA
−
I_C = 1 A; I_B = 100 mA; note 1
−
V_CE = 5 V; I_C = 1 A; note 1
−
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz
−
I_C = 50 mA; V_CE = 10 V; f = 100 MHz 150
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MAX.
100
100
100
UNIT
nA
nA
nA
−
900
−
200
mV
300
mV
500
mV
1.2
V
1.1
V
10
pF
−
MHz
1999 Aug 04
3