PMMT491A Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN BISS transistor

Philips Semiconductors
NPN BISS transistor
Product specification
PMMT491A
FEATURES
• High current (max. 1 A)
• Low collector-emitter saturation voltage ensures
reduced power consumption.
APPLICATIONS
• Battery powered units where high current and low power
consumption are important.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN BISS (Breakthrough In Small Signal) transistor in a
SOT23 plastic package. PNP complement: PMMT591A.
MARKING
TYPE NUMBER
PMMT491A
MARKING CODE⁽¹⁾
9A∗
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
40
40
5
1
2
1
250
+150
150
+150
UNIT
V
V
V
A
A
A
mW
°C
°C
°C
1999 Aug 04
2