PMEG2015EV_15 Datasheet, PDF (3/7 Pages) NXP Semiconductors – Low VF MEGA Schottky barrier diode

NXP Semiconductors
Low V_F MEGA Schottky barrier diode
Product data sheet
PMEG2015EV
ELECTRICAL CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
V_F
continuous forward voltage
I_R
continuous reverse current
C_d
diode capacitance
see Fig.2; note 1
I_F = 10 mA
240
I_F = 100 mA
300
I_F = 1 000 mA
480
I_F = 1 500 mA
530
see Fig.3; note 2
V_R = 5 V
5
V_R = 8 V
7
V_R = 15 V
10
V_R = 5 V; f = 1 MHz; see Fig.4 19
Notes
1. Only valid if pins 1, 2 and 5, 6 are soldered on 1 cm² copper solder land.
2. Pulse test: t_p = 300 μs; δ = 0.02.
MAX.
270
350
550
660
10
20
50
25
UNIT
mV
mV
mV
mV
μA
μA
μA
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
thermal resistance from junction to solder point
note 1
note 2
note 3
405
K/W
215
K/W
80
K/W
Notes
1. Refer to SOT666 standard mounting conditions.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for cathode 1 cm².
3. Soldering point of cathode tabs.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Jun 03
3