PMEG2015EV_15 Datasheet, PDF (2/7 Pages) NXP Semiconductors – Low VF MEGA Schottky barrier diode

NXP Semiconductors
Low V_F MEGA Schottky barrier diode
Product data sheet
PMEG2015EV
FEATURES
• Forward current: 1.5 A
• Reverse voltage: 20 V
• Very low forward voltage
• Ultra small plastic SMD package
• Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS
• Low voltage rectification
• High efficiency DC-DC conversion
• Switch mode power supply
• Inverse polarity protection
• Low power consumption applications.
PINNING
PIN
1
2
3
4
5
6
handbook, halfpag6e 5 4
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOT666 ultra small
SMD plastic package.
123
Marking code: F5.
DESCRIPTION
cathode
cathode
anode
anode
cathode
cathode
1, 2
5, 6
3, 4
MHC310
Fig.1 Simplified outline (SOT666 and symbol).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_R
I_F
I_FSM
I_FRM
T_stg
T_j
T_amb
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
T_s < 55 °C
t_p = 8 ms square wave; note 1
t_p = 1 ms; δ = ≤ 0.25
MIN.
−
−
−
−
−65
−
−65
Note
1. Only valid if pins 3 and 4 are connected in parallel.
MAX.
20
1.5
10
4.5
+150
150
+125
UNIT
V
A
A
A
°C
°C
°C
2003 Jun 03
2