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| PMEG1020EV Datasheet, PDF (3/7 Pages) NXP Semiconductors – Ultra low VF MEGA Schottky barrier rectifier | |||
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Philips Semiconductors
Ultra low VF MEGA Schottky barrier rectiï¬er
Product speciï¬cation
PMEG1020EV
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
CONDITIONS
see Fig.2; note 1
IF = 0.01 A
IF = 0.1 A
IF = 1 A
IF = 2 A
see Fig.3 note 2
VR = 5 V
VR = 8 V
VR = 10 V
VR = 5 V; f = 1 MHz; see Fig.4
TYP. MAX. UNIT
100
130
mV
164
200
mV
255
350
mV
306
460
mV
0.7
2
mA
1
2.5
mA
1.2
3
mA
37
45
pF
Notes
1. Pulse test: tp = 300 µs; δ = 0.02.
2. For Schottky barrier rectifiers thermal runaway has to be considered, as in some applications the reverse power
losses (PR) are a significant part of the total power losses.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to solder point
note 1
note 2
note 3
405
K/W
215
K/W
80
K/W
Notes
1. Refer to SOT666 standard mounting conditions.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for cathode 1 cm2.
3. Solder point of cathode tabs.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Jul 15
3
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