PMEG1020EV Datasheet, PDF (2/7 Pages) NXP Semiconductors – Ultra low VF MEGA Schottky barrier rectifier

Philips Semiconductors
Ultra low V_F MEGA Schottky barrier rectifier
Product specification
PMEG1020EV
FEATURES
• Forward current: 2 A
• Reverse voltage: 10 V
• Ultra low forward voltage
• Ultra small plastic SMD package.
APPLICATIONS
• Low voltage rectification
• High efficiency DC/DC conversion
• Switch mode power supply
• Inverse polarity protection
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection encapsulated in a SOT666 ultra small
plastic SMD package.
PINNING
PIN
1
2
3
4
5
6
handbook, halfpag6e 5 4
123
DESCRIPTION
cathode
cathode
anode
anode
cathode
cathode
1, 2
5, 6
3, 4
MHC310
Marking code: F2.
Fig.1 Simplified outline (SOT666) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_R
I_F
I_FRM
I_FSM
T_stg
T_j
T_amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
T_sp ≤ 55 °C; note 1
t_p ≤ 1 ms; δ ≤ 0.5; note 1
t_p = 8 ms square wave; note 1
Note
1. Only valid if pins 3 and 4 are connected in parallel.
MIN.
−
−
−
−
−65
−
−65
MAX.
10
2
3.2
9
+150
150
+150
UNIT
V
A
A
A
°C
°C
°C
2003 Jul 15
2