PMBTA56 Datasheet, PDF (3/6 Pages) NXP Semiconductors – PNP general purpose transistor

Philips Semiconductors
PNP general purpose transistor
Product specification
PMBTA56
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_EBO
h_FE
V_CEsat
V_BE
f_T
collector cut-off current
I_E = 0; V_CB = −80 V
emitter cut-off current
I_C = 0; V_EB = −5 V
DC current gain
I_C = −10 mA; V_CE = −1 V
I_C = −100 mA; V_CE = −1 V
collector-emitter saturation voltage I_C = −100 mA; I_B = −10 mA
base-emitter voltage
I_C = −100 mA; V_CE = −1 V
transition frequency
I_C = −100 mA; V_CE = −1 V;
f = 100 MHz
MIN.
−
−
100
100
−
−
50
MAX.
−50
−50
−
−
−250
−1.2
−
UNIT
nA
nA
mV
V
MHz
2004 Jan 09
3