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PMBTA56 Datasheet, PDF (2/6 Pages) NXP Semiconductors – PNP general purpose transistor | |||
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Philips Semiconductors
PNP general purpose transistor
Product speciï¬cation
PMBTA56
FEATURES
⢠High current (max. 500 mA)
⢠Low voltage (max. 80 V).
APPLICATIONS
⢠General purpose switching and amplification, e.g.
telephony and professional communication equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: PMBTA06.
MARKING
TYPE NUMBER
PMBTA56
MARKING CODE(1)
*2G
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PMBTA56
NAME
â
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ⤠25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
â
â
â
â
â
â
â
â65
â
â65
MAX.
â80
â80
â5
â500
â1
â200
250
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
2004 Jan 09
2
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