PMBTA06 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN general purpose transistor

Philips Semiconductors
NPN general purpose transistor
Product specification
PMBTA06
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
V_BE
f_T
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter voltage
transition frequency
I_E = 0; V_CB = 80 V
−
I_C = 0; V_EB = 5 V
−
I_C = 10 mA; V_CE = 1 V
100
I_C = 100 mA; V_CE = 1 V
100
I_C = 100 mA; I_B = 10 mA
−
I_C = 100 mA; V_CE = 1 V
−
I_C = 10 mA; V_CE = 2 V; f = 100 MHz 100
MAX.
50
50
−
−
0.25
1.2
−
UNIT
nA
nA
V
V
MHz
1999 Apr 29
3