PMBTA06 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN general purpose transistor

Philips Semiconductors
NPN general purpose transistor
Product specification
PMBTA06
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 80 V).
APPLICATIONS
• General purpose switching and amplification in e.g.
telephony and professional communication equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: PMBTA56.
MARKING
TYPE NUMBER
PMBTA06
MARKING CODE⁽¹⁾
∗1G
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
80
80
4
500
1
200
250
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
1999 Apr 29
2