PMBFJ210 Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel field-effect transistors

Philips Semiconductors
N-channel field-effect transistors
Product specification
PMBFJ210; PMBFJ211; PMBFJ212
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_DS
V_GSO
V_DGO
I_G
P_tot
T_stg
T_j
PARAMETER
drain-source voltage
gate-source voltage
drain-gate voltage
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open drain
open source
T_amb ≤ 25 °C; note 1; see Fig.13
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−65
−
MAX.
±25
−25
−25
10
250
150
150
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
VALUE
500
UNIT
K/W
1997 Dec 01
3