PMBFJ210 Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel field-effect transistors

Philips Semiconductors
Product specification
N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212
FEATURES
• High speed switching
• Interchangeability of drain and source connections
• High impedance.
APPLICATIONS
• Analog switches
• Choppers, multiplexers and commutators
• Audio amplifiers.
DESCRIPTION
N-channel symmetrical junction field-effect transistor in a
SOT23 package.
PINNING - SOT23
PIN
SYMBOL
1
s
2
d
3
g
DESCRIPTION
source
drain
gate
handbook, halfpage
3
1
2
Top view
d
g
s
MAM385
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
Marking codes:
PMBFJ210: M68.
PMBFJ211: M69.
PMBFJ212: M70.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_DS
V_GSoff
drain-source voltage
gate-source cut-off voltage
PMBFJ210
PMBFJ211
PMBFJ212
I_DSS
drain current
PMBFJ210
PMBFJ211
PMBFJ212
P_tot
y_fs
total power dissipation
common-source transfer admittance
PMBFJ210
PMBFJ211
PMBFJ212
CONDITIONS
I_D = 1 nA; V_DS = 15 V
V_GS = 0; V_DS = 15 V
T_amb ≤ 25 °C
V_GS = 0; V_DS = 15 V
MIN. MAX. UNIT
−
±25
V
−1
−3
V
−2.5 −4.5 V
−4
−6
V
2
15
mA
7
20
mA
15
40
mA
−
250
mW
4
12
mS
6
12
mS
7
12
mS
1997 Dec 01
2